? 2011 ixys corporation, all rights reserved ds100066a(02/11) v dss = 900v i d25 = 56a r ds(on) 145m t rr 300ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c, r gs = 1m 900 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c56a i dm t c = 25 c, pulse width limited by t jm 168 a i a t c = 25 c28a e as t c = 25 c2j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 1000 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g ixfn56n90p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 8ma 900 v v gs(th) v ds = v gs , i d = 3ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 145 m g d s s minibloc e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. polar tm hiperfet tm power mosfet features z international standard package z minibloc, with aluminium nitride isolation z low r ds(on) and q g z avalanche rated z low package inductance z fast intrinsic rectifier advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. ixfn56n90p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 27 44 s r gi gate input resistance 0.85 c iss 23 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1385 pf c rss 106 pf t d(on) 74 ns t r 80 ns t d(off) 93 ns t f 38 ns q g(on) 375 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 80 nc q gd 145 nc r thjc 0.125 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 56 a i sm repetitive, pulse width limited by t jm 224 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.8 c i rm 15 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. sot-227b (ixfn) outline (m4 screws (4x) supplied) resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 0.5 ? i d25 , -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2011 ixys corporation, all rights reserved ixfn56n90p fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 012345678 v ds - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 28a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 56a i d = 28a fig. 5. r ds(on) normalized to i d = 28a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 20 40 60 80 100 120 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfn56n90p ixys ref: f_56n90p(99)10-24-08 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 102030405060708090 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v gs - volts v ds = 450v i d = 28a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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